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The origin of the ∼0.75 eV photoluminescence emission band in ion-implanted InPTHOMPSON, T. D; BARBARA, J; RIDGWAY, M. C et al.Journal of applied physics. 1992, Vol 71, Num 12, pp 6073-6078, issn 0021-8979Article

Ion beam induced epitaxial crystallization of NiSi₂RIDGWAY, M. C; ELLIMAN, R. G; WILLIAMS, J. S et al.Applied physics letters. 1990, Vol 56, Num 21, pp 2117-2119, issn 0003-6951Article

PAC investigations of radiation damage annealing in ¹¹¹In implanted ZnODOGRA, R; BYRNE, A. P; RIDGWAY, M. C et al.Optical materials (Amsterdam). 2009, Vol 31, Num 10, pp 1443-1447, issn 0925-3467, 5 p.Article

Isotope effects for mega-electron-volt boron ions in amorphous siliconSVENSSON, B. G; RIDGWAY, M. C; PETRAVIC, M et al.Journal of applied physics. 1993, Vol 73, Num 10, pp 4836-4840, issn 0021-8979, 1Article

Sputtering behaviour of stainless steel during Pt ion implantationCLAPHAM, L; WHITTON, J. L; RIDGWAY, M. C et al.Materials letters (General ed.). 1993, Vol 16, Num 2-3, pp 139-141, issn 0167-577XArticle

X-ray scattering from amorphous solidsRUIXING FENG; STACHURSKI, Z. H; RODRIGUEZ, M. D et al.Journal of non-crystalline solids. 2014, Vol 383, pp 21-27, issn 0022-3093, 7 p.Conference Paper

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Nuclear reaction analysis of shallow B and BF₂ implants in SiRIDGWAY, M. C; SCANLON, P. J; WHITTON, J. L et al.Journal of applied physics. 1987, Vol 62, Num 9, pp 3682-3687, issn 0021-8979Article

Annealing of ion-implanted SiC by laser-pulse-exposure-generated shock-wavesMULPURI, K. B; QADRI, S. B; GRUN, J et al.Solid-state electronics. 2006, Vol 50, Num 6, pp 1035-1040, issn 0038-1101, 6 p.Conference Paper

In-situ microscopy study of nanocavity shrinkage in Si under ion beam irradiationRUAULT, M.-O; RIDGWAY, M. C; FORTUNA, F et al.EPJ. Applied physics (Print). 2003, Vol 23, Num 1, pp 39-40, issn 1286-0042, 2 p.Conference Paper

Atomic force microscopy and high-resolution RBS investigation of the surface modification of magnetron sputter-etched Si(111) in an argon plasma at different pressuresDEENAPANRAY, P. N. K; HILLIE, K. T; DEMANET, C. M et al.Surface and interface analysis. 1999, Vol 27, Num 10, pp 881-888, issn 0142-2421Article

Mixing and corrosion in Ni implanted with Pt through a sacrificial layer of aluminaDUFFY, A. G; CLAPHAM, L; RIDGWAY, M. C et al.Surface & coatings technology. 1996, Vol 83, Num 1-3, pp 189-193, issn 0257-8972Conference Paper

The use of an Al sacrificial layer to improve retention during high dose Pt ion implantation into NiCLAPHAM, L; WHITTON, J. L; PASCUAL, R et al.Journal of applied physics. 1993, Vol 74, Num 11, pp 6619-6624, issn 0021-8979Article

Single-step implant isolation of p⁺-InP with 5-MeV O ionsRIDGWAY, M. C; JAGADISH, C; ELLIMAN, R. G et al.Applied physics letters. 1992, Vol 60, Num 24, pp 3010-3012, issn 0003-6951Article

Use of MeV O⁺ ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistorsPEARTON, S. J; REN, F; JAGADISH, C et al.Journal of applied physics. 1992, Vol 71, Num 10, pp 4949-4954, issn 0021-8979Article

High dose, heavy ion implantation into metals : the use of a sacrifial carbon surface layer for increased dose retentionCLAPHAM, L; WHITTON, J. L; RIDGWAY, M. C et al.Journal of applied physics. 1992, Vol 72, Num 9, pp 4014-4019, issn 0021-8979Article

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SAXS investigations of the morphology of swift heavy ion tracks in α-quartzAFRA, B; RODRIGUEZ, M. D; KIRBY, N et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 4, issn 0953-8984, 045006.1-045006.9Article

Multiple scattering effects on the EXAFS of Ge nanocrystalsARAUJO, L. L; FORAN, G. J; RIDGWAY, M. C et al.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 16, issn 0953-8984, 165210.1-165210.9Article

Athermal annealing of Mg-implanted GaAsSIMONSON, J; QADRI, S. B; RAO, M. V et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 81, Num 3, pp 601-605, issn 0947-8396, 5 p.Article